10A, 650V N-CHANNEL MOSFET-SVF10N65T/F/K/S

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10A, 650V N-CHANNEL MOSFET
Product：SVF10N65T/F/K/S
1、General Description
SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan
proprietary F-Cell ^TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

2、 Features

∗ 10A,650V,RDS(on)(typ.)=0.80Ω@VGS=10V

∗ Low gate charge

∗ Low Crss

∗ Fast switching

∗ Improved dv/dt capability

3、NOMENCLATURE

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Head office:No.8,Yanhe East Street, Ailingkan Village, Dalingshan Town, Dongguan City, Guangdong Province, China
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Shenzhen office:Baifuhui Industrial Park,Jianshedonglu Road,Longhua District,Shenzhen City,Guangdong Province,China
Foshan office: No.169 Rongqi Road,Ronggui Village,Shunde District,Foshan City,Guangdong Province,China
Zhongshan office:Shijihaoting,Longchang Road,Dongsheng Village,Zhongshan City,Guangdong Province,China
Hangzhou office:Jiangnanmoka,Wenyan Village,Xiaoshan District,Hangzhou City,Zhejiang Province,China[Background management]
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